Large magnetoresistance using hybrid spin filter devices

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Electrically programmable magnetoresistance in multifunctional organic-based spin valve devices.

Information and communication technology (ICT) is now calling for solutions enabling lower power consumption, further miniaturization, and multifunctionality requiring the development of new device concepts and new materials. [ 1 ] One of the most fertile approaches to meet such demands is spintronics, which is now facing the challenge of evolving from the fi rst generation of devices that led ...

متن کامل

Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid

We report an investigation of anisotropic magnetoresistance (AMR) and anomalous Hall resistance (AHR) of Rh and Pt thin films sputtered on epitaxial Y(3)Fe(5)O(12) (YIG) ferromagnetic insulator films. For the Pt/YIG hybrid, large spin-Hall magne toresistance (SMR) along with a sizable conventional anisotropic magnetoresistance (CAMR) and a nontrivial temperature dependence of AHR were observed ...

متن کامل

Large magnetoresistance in a manganite spin tunnel junction using LaMnO3 as the insulating barrier

A spin tunnel junction based on manganites, with La1−xSrxMnO3 LSMO as ferromagnetic metallic electrodes and the undoped parent compound LaMnO3 LMO as insulating barrier, is here theoretically discussed using double-exchange model Hamiltonians and numerical techniques. For an even number of LMO layers, the ground state is shown to have antiparallel LSMO magnetic moments. This highly resistive, b...

متن کامل

Magnetoresistance of nanoscale molecular devices.

Affecting the current through a molecular or nanoscale junction is usually done by a combination of bias and gate voltages. Magnetic fields are less studied because nanodevices can capture only low values of the magnetic flux. We review recent work done with the aim of finding the conditions for magnetic fields to significantly affect the conductance of such junctions. The basic idea is to crea...

متن کامل

Tunneling anisotropic magnetoresistance: a spin-valve-like tunnel magnetoresistance using a single magnetic layer.

We introduce a new class of spintronic devices in which a spin-valve-like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal-insulator-ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the a...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2002

ISSN: 0003-6951,1077-3118

DOI: 10.1063/1.1436284